Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

标题
Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 20, Pages 202117
出版商
AIP Publishing
发表日期
2008-05-23
DOI
10.1063/1.2927306

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