The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

标题
The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 12, Pages 123502
出版商
AIP Publishing
发表日期
2009-09-23
DOI
10.1063/1.3232179

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