Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

标题
Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 9, Pages 093510
出版商
AIP Publishing
发表日期
2013-03-07
DOI
10.1063/1.4794009

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