期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3267157
关键词
compressive strength; dielectric polarisation; gallium compounds; high electron mobility transistors; III-V semiconductors; internal stresses; Raman spectra; silicon; silicon compounds; spectral line breadth; tensile strength; thermoelasticity; two-dimensional electron gas
资金
- NSF CAREER [CTS-0448795]
- Air Force Research Laboratory (AFRL) Materials and Manufacturing Directorate
- Sandia Corporation, a Lockheed Martin Co.
- United States Department of Energy's National Nuclear Security Administration [DEAC04-94AL8500]
The capability of gallium nitride (GaN) high power transistors arises, in large part, due to piezoelectric polarizations that induce the formation of a carrier rich two-dimensional electron gas. These polarizations, in turn, are directly related to the strain and hence stress that is present within the transistor. As a consequence, the stress load, as well as its measurement, is extremely important to the optimization of this device class. In response, this study demonstrates a technique to quantify the magnitude of operational thermoelastic stress that evolves in a GaN transistor through simultaneous use of the Raman signal's Stokes peak position and linewidth. After verifying the technique through comparison with a finite element model, the method is then utilized in the analysis of high electron mobility transistors grown on silicon (Si) and silicon carbide (SiC) substrates. For each series of device, the major stress contributors-thermoelastic, converse piezoelectric, and residual-are acquired and compared. While the magnitudes of the components are larger in those devices grown on silicon, the resultant biaxial loads in each of the devices are comparable at high power levels as the dominant residual tensile stress is counterbalanced by the compressive thermoelastic contribution.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据