Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

(2010) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

(2010) M. Gassoumi et al.   PHYSICA B-CONDENSED MATTER

Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

(2009) Z.-Q. Fang et al.   JOURNAL OF APPLIED PHYSICS

Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces

(2008) Yoshitaka Nakano et al.   Applied Physics Express

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

(2008) P. Kordoš et al.   APPLIED PHYSICS LETTERS

Mechanism of AlGaN/GaN Heterostructure Field-Effect Transistor Threshold Voltage Shift by Illumination

(2008) Masaya Okada et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

(2007) M. Gassoumi et al.   MICROELECTRONICS JOURNAL