4.3 Article

Three-dimensional finite-element thermal simulation of GaN-based HEMTs

期刊

MICROELECTRONICS RELIABILITY
卷 49, 期 5, 页码 468-473

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2009.02.009

关键词

-

向作者/读者索取更多资源

The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management. (C) 2009 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据