期刊
JOURNAL OF APPLIED PHYSICS
卷 111, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3698492
关键词
-
资金
- Office of Naval Research
A fully coupled multi-dimensional continuum model of the thermoelectromechanics of GaN HEMTs is presented and discussed. The governing equations are those of linear thermoelectroelasticity, diffusion-drift transport theory, and heat conduction, with full coupling assumed, i.e., all mechanical, electrical, and thermal variables are solved for simultaneously. Apart from the known strains induced by epitaxy, plane-strain conditions are assumed, so that two-dimensional simulation suffices. Important aspects of the model are that it incorporates actual device geometries and that it captures field/stress concentrations that often occur near material discontinuities and especially at corners. The latter are shown to be especially important with regards to understanding the mechanisms of both electrical and mechanical degradation in GaN HEMTs. Various possible contributors to degradation are discussed, including electron injection, the inverse piezoelectric effect, thermal stress, SiN intrinsic stress, and device geometry. The possibilities of crack propagation and fracture of the AlGaN are also analyzed. [http://dx.doi.org/10.1063/1.3698492]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据