期刊
APPLIED PHYSICS LETTERS
卷 100, 期 3, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3678041
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- ONR [N000141010608]
This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based high electron mobility transistors submitted to reverse-bias stress. We show that: (1) exposure to reverse-bias may induce recoverable changes in gate leakage and threshold voltage, due to the accumulation of negative charge within the AlGaN layer, and of positive charge at the AlGaN/GaN interface. (2) Permanent degradation consists in the generation of parasitic leakage paths. Several findings support the hypothesis that permanent degradation is due to a defect percolation process: (2(a)) for sufficiently long stress times, degradation occurs even below the critical voltage estimated by step stress experiments; (2(b)) before permanent degradation, gate current becomes noisy, indicating an increase in defect concentration; and (2(c)) time to breakdown strongly depends on the initial defectiveness of the samples. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678041]
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