期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 10, 页码 1378-1380出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2206556
关键词
AlGaN/GaN high-electron-mobility transistors (HEMTs); current collapse; moisture; passivation
资金
- Office of Naval Research Design for Reliability Initiative for Future Technologies (DRIFT)
- Dielectric Enhancements for Innovative Electronics (DEFINE) Multidisciplinary University Research Initiative Program
In this letter, ambient moisture has been identified as a previously unrecognized cause of current collapse in AlGaN/GaN high-electron-mobility transistors. Unpassivated devices exposed to dry air or protected with a hydrophobic passivation, such as vapor-deposited fluorocarbon, showed negligible current collapse under 250-ns pulsed measurements. A mechanism based on the ionization and deionization of the water molecules at the device surface has been proposed to explain this behavior. The use of a hydrophobic passivation to prevent dc-to-RF dispersion works even when it is not directly in contact with the semiconductor surface, which allows the engineering of multistack passivation layers to eliminate current collapse while minimizing parasitic capacitance.
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