期刊
MICROELECTRONICS RELIABILITY
卷 52, 期 1, 页码 23-28出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2011.09.018
关键词
-
AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage (V-CRI) for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhibited similar gate leakage currents before and after biasing to V-CRI, independent of both stress temperature and critical voltage. Though no crack formation was observed after stress, cross-sectional TEM indicates a breakdown in the oxide interfacial layer due to high reverse gate bias. (C) 2011 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据