Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

标题
Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 12, Pages 1395-1397
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-10-20
DOI
10.1109/led.2010.2077730

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