Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

(2014) Hsiao-Hsuan Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

(2013) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

(2012) Jae Gwang Um et al.   APPLIED PHYSICS LETTERS

Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors

(2012) Mallory Mativenga et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

(2012) Keisuke Ide et al.   JOURNAL OF APPLIED PHYSICS

Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process

(2012) S. H. Ryu et al.   ECS Solid State Letters

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

(2011) Man Ju Seok et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Drain-Offset a-IGZO Thin-Film Transistors

(2011) Mallory Mativenga et al.   IEEE ELECTRON DEVICE LETTERS

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

(2011) Md Delwar Hossain Chowdhury et al.   JOURNAL OF APPLIED PHYSICS

Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistors

(2011) Dong Youn Yoo et al.   THIN SOLID FILMS

Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

(2011) Kenji Nomura et al.   THIN SOLID FILMS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Material characteristics and applications of transparent amorphous oxide semiconductors

(2010) Toshio Kamiya et al.   NPG Asia Materials

Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

(2009) Po-Tsun Liu et al.   APPLIED PHYSICS LETTERS

Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

(2009) Hyun-Sik Seo et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS