Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

Published 2011 View Full Article

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Title
Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 520, Issue 10, Pages 3778-3782
Publisher
Elsevier BV
Online
2011-11-04
DOI
10.1016/j.tsf.2011.10.068

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