Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Published 2009 View Full Article

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Title
Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer
Authors
Keywords
-
Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 9, Pages H348
Publisher
The Electrochemical Society
Online
2009-07-16
DOI
10.1149/1.3168522

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