Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process

Published 2012 View Full Article

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Title
Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 1, Issue 2, Pages Q17-Q19
Publisher
The Electrochemical Society
Online
2012-08-01
DOI
10.1149/2.004202ssl

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