Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode

Authors

Keywords

Journal

Volume 30, Issue 5, Pages 550-552

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2009-04-01

DOI

10.1109/led.2009.2016582

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