- Home
- Publications
- Publication Search
- Publication Details
Title
Adaptive oxide electronics: A review
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 7, Pages 071101
Publisher
AIP Publishing
Online
2011-10-05
DOI
10.1063/1.3640806
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
- (2011) An Quan Jiang et al. ADVANCED MATERIALS
- Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
- (2011) Zheng Yang et al. Annual Review of Materials Research
- Artificial cognitive memory—changing from density driven to functionality driven
- (2011) L. P. Shi et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Synaptic behaviors of a single metal–oxide–metal resistive device
- (2011) Sang-Jun Choi et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Resistance switching memories are memristors
- (2011) Leon Chua APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Chaotic memristor
- (2011) T. Driscoll et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
- (2011) Sieu D. Ha et al. APPLIED PHYSICS LETTERS
- From Synapses to Circuitry: Using Memristive Memory to Explore the Electronic Brain
- (2011) Greg Snider et al. COMPUTER
- Variable gain amplifier circuit using titanium dioxide memristors
- (2011) T.A. Wey et al. IET Circuits Devices & Systems
- Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon
- (2011) Sieu D. Ha et al. JOURNAL OF APPLIED PHYSICS
- Tunable work function of a WOx buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells
- (2011) Liang Fang et al. JOURNAL OF APPLIED PHYSICS
- Thermographic analysis of localized conductive channels in bipolar resistive switching devices
- (2011) Yi Meng Lu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Whither Oxide Electronics?
- (2011) Ramamoorthy Ramesh et al. MRS BULLETIN
- Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
- (2011) Kyungah Seo et al. NANOTECHNOLOGY
- Mixed analog-digital crossbar-based hardware implementation of sign–sign LMS adaptive filter
- (2010) Farnood Merrikh-Bayat et al. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
- Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers
- (2010) A. Crassous et al. APPLIED PHYSICS LETTERS
- Memristive adaptive filters
- (2010) T. Driscoll et al. APPLIED PHYSICS LETTERS
- Passive switching of electromagnetic devices with memristors
- (2010) Matthew G. Bray et al. APPLIED PHYSICS LETTERS
- Overview of the IBM Blue Gene/P project
- (2010) IBM JOURNAL OF RESEARCH AND DEVELOPMENT
- Overview of candidate device technologies for storage-class memory
- (2010) G. W. Burr et al. IBM JOURNAL OF RESEARCH AND DEVELOPMENT
- Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering
- (2010) Lijie Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM
- (2010) W.C. Chien et al. IEEE ELECTRON DEVICE LETTERS
- Configurable Neural Phase Shifter With Spike-Timing-Dependent Plasticity
- (2010) Lei Zhang et al. IEEE ELECTRON DEVICE LETTERS
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
- (2010) Shimeng Yu et al. IEEE ELECTRON DEVICE LETTERS
- Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory
- (2010) Seong-Geon Park et al. IEEE ELECTRON DEVICE LETTERS
- Analog VLSI Biophysical Neurons and Synapses With Programmable Membrane Channel Kinetics
- (2010) Theodore Yu et al. IEEE Transactions on Biomedical Circuits and Systems
- Practical Approach to Programmable Analog Circuits With Memristors
- (2010) Yuriy V. Pershin et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- A 1.62/2.7-Gb/s Adaptive Transmitter With Two-Tap Preemphasis Using a Propagation-Time Detector
- (2010) Shih-Yuan Kao et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
- Memristor Applications for Programmable Analog ICs
- (2010) Sangho Shin et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions
- (2010) William M. Tong et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines
- (2010) Kamran Eshraghian et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- IMPLEMENTING MEMRISTOR BASED CHAOTIC CIRCUITS
- (2010) BHARATHWAJ MUTHUSWAMY INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
- Unipolar resistive switching behaviors in amorphous lutetium oxide films
- (2010) Xu Gao et al. JOURNAL OF APPLIED PHYSICS
- The fabrication of a programmable via using phase-change material in CMOS-compatible technology
- (2010) Kuan-Neng Chen et al. NANOTECHNOLOGY
- A memristor-based nonvolatile latch circuit
- (2010) Warren Robinett et al. NANOTECHNOLOGY
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Experimental demonstration of associative memory with memristive neural networks
- (2010) Yuriy V. Pershin et al. NEURAL NETWORKS
- Artificial neural networks in hardware: A survey of two decades of progress
- (2010) Janardan Misra et al. NEUROCOMPUTING
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- An Emergent Change of Phase for Electronics
- (2010) H. Takagi et al. SCIENCE
- Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3
- (2009) Dhanvir Singh Rana et al. ADVANCED MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Switchable rectifier built with Pt/TiOx/Pt trilayer
- (2009) Hisashi Shima et al. APPLIED PHYSICS LETTERS
- Role of TaON interface for CuxO resistive switching memory based on a combined model
- (2009) APPLIED PHYSICS LETTERS
- Memristive switching of MgO based magnetic tunnel junctions
- (2009) Patryk Krzysteczko et al. APPLIED PHYSICS LETTERS
- Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices
- (2009) Z. L. Liao et al. APPLIED PHYSICS LETTERS
- Multilevel unipolar resistance switching in TiO2 thin films
- (2009) J. S. Lee et al. APPLIED PHYSICS LETTERS
- Phase-transition driven memristive system
- (2009) T. Driscoll et al. APPLIED PHYSICS LETTERS
- Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions
- (2009) Wenhong Wang et al. APPLIED PHYSICS LETTERS
- Memristor-based stored-reference receiver–the UWB solution?
- (2009) K. Witrisal ELECTRONICS LETTERS
- Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
- (2009) Bin Gao et al. IEEE ELECTRON DEVICE LETTERS
- Elimination of Forming Process for TiOx Nonvolatile Memory Devices
- (2009) W. Wang et al. IEEE ELECTRON DEVICE LETTERS
- RESET Mechanism of TiOx Resistance-Change Memory Device
- (2009) Wei Wang et al. IEEE ELECTRON DEVICE LETTERS
- Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications
- (2009) Sung-Min Yoon et al. IEEE ELECTRON DEVICE LETTERS
- Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
- (2009) Xiaobin Wang et al. IEEE ELECTRON DEVICE LETTERS
- Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications
- (2009) Dong-Jun Seong et al. IEEE ELECTRON DEVICE LETTERS
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Design of Reconfigurable and Robust Integrated SC Power Converter for Self-Powered Energy-Efficient Devices
- (2009) I. Chowdhury et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- A Signal-Processing Adaptive Algorithm for Selective Current Harmonic Cancellation in Active Power Filters
- (2009) F.D. Freijedo et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- MEMRISTOR OSCILLATORS
- (2009) MAKOTO ITOH et al. INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS
- Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
- (2009) B. Sun et al. JOURNAL OF APPLIED PHYSICS
- Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
- (2009) Xun Cao et al. JOURNAL OF APPLIED PHYSICS
- Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
- (2009) Qiangfei Xia et al. NANO LETTERS
- An electrically modifiable synapse array of resistive switching memory
- (2009) Hyejung Choi et al. NANOTECHNOLOGY
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
- Classification of Correlated Patterns with a Configurable Analog VLSI Neural Network of Spiking Neurons and Self-Regulating Plastic Synapses
- (2009) Massimilian Giulioni et al. NEURAL COMPUTATION
- Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions
- (2009) S. Asanuma et al. PHYSICAL REVIEW B
- Memristive model of amoeba learning
- (2009) Yuriy V. Pershin et al. PHYSICAL REVIEW E
- A hybrid nanomemristor/transistor logic circuit capable of self-programming
- (2009) Julien Borghetti et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
- (2009) T. Choi et al. SCIENCE
- Polarization Control of Electron Tunneling into Ferroelectric Surfaces
- (2009) P. Maksymovych et al. SCIENCE
- First-principles study on the electronic and optical properties of BiFeO3
- (2009) Hai Wang et al. SOLID STATE COMMUNICATIONS
- Resistance Switching in Anodic Oxidized Amorphous TiO2Films
- (2008) Changhao Liang et al. Applied Physics Express
- Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer
- (2008) Hisashi Shima et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
- (2008) Hisashi Shima et al. APPLIED PHYSICS LETTERS
- Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
- (2008) Xiaohua Lou et al. APPLIED PHYSICS LETTERS
- How We Found The Missing Memristor
- (2008) R. Williams IEEE SPECTRUM
- Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
- (2008) Yong-Mu Kim et al. JOURNAL OF APPLIED PHYSICS
- Process and Material Properties of HfLaO[sub x] Prepared by Atomic Layer Deposition
- (2008) Wei He et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The fourth circuit element
- (2008) Neil D. Mathur NATURE
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- Epitaxial growth of high-κ oxides on silicon
- (2008) C. Merckling et al. THIN SOLID FILMS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More