Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

(2013) I. P. Seetoh et al.   APPLIED PHYSICS LETTERS

Nanopore morphology in porous GaN template and its effect on the LEDs emission

(2013) C B Soh et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN

(2013) Ian P. Seetoh et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes

(2012) Guo-Guang Wu et al.   APPLIED PHYSICS LETTERS

Proposal of High Performance 1.55µm Quantum Dot Heterostructure Laser Using InN

(2012) Md. Mottaleb HOSSAIN et al.   IEICE TRANSACTIONS ON ELECTRONICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Evaluation of threading dislocation densities in In- and N-face InN

(2010) C. S. Gallinat et al.   JOURNAL OF APPLIED PHYSICS

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

(2010) C. B. Soh et al.   Nanoscale Research Letters

Growth of InN films and nanostructures by MOVPE

(2009) O. Briot et al.   JOURNAL OF CRYSTAL GROWTH

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

(2009) Guibao Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhanced luminescence efficiency due to carrier localization in InGaN∕GaN heterostructures grown on nanoporous GaN templates

(2008) C. B. Soh et al.   APPLIED PHYSICS LETTERS

Auger recombination in InN thin films

(2008) D.-J. Jang et al.   APPLIED PHYSICS LETTERS

Modeling of InGaN/Si tandem solar cells

(2008) L. Hsu et al.   JOURNAL OF APPLIED PHYSICS

Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

(2008) Muhammad Jamil et al.   JOURNAL OF CRYSTAL GROWTH

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization

(2007) Md. Tanvir Hasan et al.   SOLID-STATE ELECTRONICS