Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

(2011) J. Grandal et al.   APPLIED PHYSICS LETTERS

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

(2011) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Nitrogen vacancies at InN (11¯00) surfaces: A theoretical study

(2010) A. Terentjevs et al.   APPLIED PHYSICS LETTERS

InGaN/GaN nanorod array white light-emitting diode

(2010)   APPLIED PHYSICS LETTERS

Surface structure and chemical states of a-plane and c-plane InN films

(2009) Takahiro Nagata et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

The Dawn of Miniature Green Lasers

(2009) Shuji Nakamura et al.   SCIENTIFIC AMERICAN

High mobility InN epilayers grown on AlN epilayer templates

(2008) N. Khan et al.   APPLIED PHYSICS LETTERS

InN Growth by Plasma-Assisted Molecular Beam Epitaxy with Indium Monolayer Insertion

(2008) Yongzhao Yao et al.   CRYSTAL GROWTH & DESIGN

Optical characterization of InN layers grown by high-pressure chemical vapor deposition

(2008) M. Alevli et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

The influence of conduction band plasmons on core-level photoemission spectra of InN

(2008) P.D.C. King et al.   SURFACE SCIENCE