Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate

Auger recombination as the dominant nonradiative recombination channel in InN

(2013) YongJin Cho et al.   PHYSICAL REVIEW B

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy

(2011)   AIP Advances

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

(2009) Chad S. Gallinat et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns

(2008) Satoshi Harui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence

(2008) T. Akagi et al.   JOURNAL OF ELECTRONIC MATERIALS