Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Surface states and electronic structure of polar and nonpolar InN – An in situ photoelectron spectroscopy study

(2013) A. Eisenhardt et al.   APPLIED PHYSICS LETTERS

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy

(2012) Marius Millot et al.   APPLIED PHYSICS LETTERS

Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

(2012) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

(2012) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Tuning the Surface Charge Properties of Epitaxial InN Nanowires

(2012) S. Zhao et al.   NANO LETTERS

Is electron accumulation universal at InN polar surfaces?

(2011)   APPLIED PHYSICS LETTERS

InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

(2011) J. Grandal et al.   APPLIED PHYSICS LETTERS

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

(2011) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

(2010) Yi-Lu Chang et al.   ADVANCED FUNCTIONAL MATERIALS

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Room-temperature infrared photoluminescence from sputter-deposited InN films

(2010) Takashi Sasaoka et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Experimental evidence of different hydrogen donors inn-type InN

(2008) G. Pettinari et al.   PHYSICAL REVIEW B

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS

The influence of conduction band plasmons on core-level photoemission spectra of InN

(2008) P.D.C. King et al.   SURFACE SCIENCE