Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

Nitrogen vacancies at InN (11¯00) surfaces: A theoretical study

(2010) A. Terentjevs et al.   APPLIED PHYSICS LETTERS

Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

(2010) N. Ma et al.   APPLIED PHYSICS LETTERS

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering

(2010) R. Cuscó et al.   APPLIED PHYSICS LETTERS

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

(2010) J. Segura-Ruiz et al.   PHYSICAL REVIEW B

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

Optical properties of InN containing metallic indium

(2008) Ting-Ting Kang et al.   APPLIED PHYSICS LETTERS