Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy
出版年份 2018 全文链接
标题
Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 123, Issue 1, Pages 015701
出版商
AIP Publishing
发表日期
2018-01-03
DOI
10.1063/1.5008903
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template
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