Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

(2012) Kenneth S. A. Butcher et al.   APPLIED PHYSICS LETTERS

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

(2011) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

(2010) N. Ma et al.   APPLIED PHYSICS LETTERS

Room-temperature infrared photoluminescence from sputter-deposited InN films

(2010) Takashi Sasaoka et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

Photoluminescence from localized states in disordered indium nitride

(2008) Bhavtosh Bansal et al.   APPLIED PHYSICS LETTERS

The influence of conduction band plasmons on core-level photoemission spectra of InN

(2008) P.D.C. King et al.   SURFACE SCIENCE