Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

Whispering gallery mode in periodic InGaN-based hexagonal nanoring arrays grown by rf-MBE using Ti-mask selective-area growth

(2009) Tetsuya Kouno et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

(2008) Tomonari Shioda et al.   Applied Physics Express

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

(2008) Hiroto Sekiguchi et al.   Applied Physics Express

Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy

(2008) Shunsuke Ishizawa et al.   Applied Physics Express

Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns

(2008) Satoshi Harui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

(2008) Katsumi Kishino et al.   JOURNAL OF CRYSTAL GROWTH