Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks
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Title
Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 10, Pages 104103
Publisher
AIP Publishing
Online
2015-03-14
DOI
10.1063/1.4914492
References
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Related references
Note: Only part of the references are listed.- Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks
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- Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices
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- Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces
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- The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique
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