Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 7, Issue 37, Pages 20499-20506
Publisher
American Chemical Society (ACS)
Online
2015-09-04
DOI
10.1021/acsami.5b06087

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.