Ferroelectric-Gated Two-Dimensional-Material-Based Electron Devices
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Ferroelectric-Gated Two-Dimensional-Material-Based Electron Devices
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 3, Issue 4, Pages 1600400
Publisher
Wiley
Online
2017-01-03
DOI
10.1002/aelm.201600400
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control
- (2016) Cory D. Cress et al. ACS Nano
- Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping
- (2016) Changjian Zhou et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory
- (2016) Changhyun Ko et al. ADVANCED MATERIALS
- Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2
- (2016) Yuda Zhao et al. ADVANCED MATERIALS
- Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance
- (2016) Jae Hyo Park et al. APPLIED PHYSICS LETTERS
- Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
- (2016) Felicia A. McGuire et al. APPLIED PHYSICS LETTERS
- Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure
- (2016) Takuhei Kobayashi et al. APPLIED PHYSICS LETTERS
- Single gate p-n junctions in graphene-ferroelectric devices
- (2016) J. Henry Hinnefeld et al. APPLIED PHYSICS LETTERS
- Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
- (2016) Asif Islam Khan et al. IEEE ELECTRON DEVICE LETTERS
- Ferroelectric properties of vinylidene fluoride/tetrafluoroethylene copolymer thin films consisting of needle-like crystals
- (2016) Yuuta Nakagawa et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers
- (2016) Yu Jin Kim et al. NANO LETTERS
- The chips are down for Moore’s law
- (2016) M. Mitchell Waldrop NATURE
- Experimental realization of two-dimensional boron sheets
- (2016) Baojie Feng et al. Nature Chemistry
- Physical properties of low-dimensionalsp2-based carbon nanostructures
- (2016) V. Meunier et al. REVIEWS OF MODERN PHYSICS
- Single crystal functional oxides on silicon
- (2016) Saidur Rahman Bakaul et al. Nature Communications
- Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
- (2016) Pedro C Feijoo et al. 2D Materials
- Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories
- (2015) Alexey Lipatov et al. ACS Nano
- Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer
- (2015) Young Tack Lee et al. ACS Nano
- Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias
- (2015) Shusuke Kasamatsu et al. ADVANCED MATERIALS
- Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics
- (2015) Xudong Wang et al. ADVANCED MATERIALS
- Temperature-dependent electrical transport properties in graphene/Pb(Zr 0.4 Ti 0.6 )O 3 field effect transistors
- (2015) Xiao-Wen Zhang et al. CARBON
- Phase engineering of transition metal dichalcogenides
- (2015) Damien Voiry et al. CHEMICAL SOCIETY REVIEWS
- MoS2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating
- (2015) Xiao-Wen Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices
- (2015) Jaesung Jo et al. NANO LETTERS
- Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
- (2015) Yeliang Wang et al. NANO LETTERS
- Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT
- (2015) Changjian Zhou et al. Nanoscale
- Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates
- (2015) Chunrui Ma et al. Nanoscale
- Negative capacitance detected
- (2015) Gustau Catalan et al. NATURE MATERIALS
- Electrical contacts to two-dimensional semiconductors
- (2015) Adrien Allain et al. NATURE MATERIALS
- Silicene field-effect transistors operating at room temperature
- (2015) Li Tao et al. Nature Nanotechnology
- Ferroelectrically driven spatial carrier density modulation in graphene
- (2015) Christoph Baeumer et al. Nature Communications
- Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
- (2015) Nan Ma et al. 2D Materials
- Tunnel Field-Effect Transistors: Prospects and Challenges
- (2015) Uygar E. Avci et al. IEEE Journal of the Electron Devices Society
- Electronic Structure and Optical Signatures of Semiconducting Transition Metal Dichalcogenide Nanosheets
- (2014) Weijie Zhao et al. ACCOUNTS OF CHEMICAL RESEARCH
- A Highly Sensitive Graphene-Organic Hybrid Photodetector with a Piezoelectric Substrate
- (2014) Wei-Chun Tan et al. ADVANCED FUNCTIONAL MATERIALS
- Systematic Doping Control of CVD Graphene Transistors with Functionalized Aromatic Self-Assembled Monolayers
- (2014) Nathan Cernetic et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric
- (2014) Dominik Martin et al. ADVANCED MATERIALS
- Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors
- (2014) Xuming Zou et al. ADVANCED MATERIALS
- Chemical Preparation of Graphene Materials Results in Extensive Unintentional Doping with Heteroatoms and Metals
- (2014) Chun Kiang Chua et al. CHEMISTRY-A EUROPEAN JOURNAL
- Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric
- (2014) Chun Hu Cheng et al. IEEE ELECTRON DEVICE LETTERS
- Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 thin films on si wafer prepared by fast cooling immediately after sputter deposition
- (2014) Shinya Yoshida et al. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
- (2014) Daniel J. R. Appleby et al. NANO LETTERS
- Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
- (2014) Weiwei Gao et al. NANO LETTERS
- Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
- (2014) M. Humed Yusuf et al. NANO LETTERS
- Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors
- (2014) Wenjing Jie et al. Nanoscale
- Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors
- (2014) Shengxue Yang et al. Nanoscale
- Negative capacitance in a ferroelectric capacitor
- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
- (2014) Britton W. H. Baugher et al. Nature Nanotechnology
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Nature and evolution of the band-edge states inMoS2: From monolayer to bulk
- (2014) J. E. Padilha et al. PHYSICAL REVIEW B
- Ferroelectric tunnel junctions with graphene electrodes
- (2014) H. Lu et al. Nature Communications
- Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications
- (2014) Ying Wang et al. Materials
- Stretchable all-solid-state supercapacitor with wavy shaped polyaniline/graphene electrode
- (2014) Yizhu Xie et al. Journal of Materials Chemistry A
- HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
- (2013) Stephen McDonnell et al. ACS Nano
- Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors
- (2013) Wenjing Jie et al. Journal of Physical Chemistry C
- Tunable Carrier Type and Density in Graphene/PbZr0.2Ti0.8O3 Hybrid Structures through Ferroelectric Switching
- (2013) Christoph Baeumer et al. NANO LETTERS
- Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies
- (2013) A. Rajapitamahuni et al. NANO LETTERS
- Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
- (2013) Mei Yin Chan et al. Nanoscale
- Ferroelectric polymer-gated graphene memory with high speed conductivity modulation
- (2013) Hyeon Jun Hwang et al. NANOTECHNOLOGY
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Doping of bi-layer graphene by gradually polarizing a ferroelectric polymer
- (2013) Martin Kalbac et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- A strong electro-optically active lead-free ferroelectric integrated on silicon
- (2013) Stefan Abel et al. Nature Communications
- Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator
- (2012) Yeon Sik Choi et al. ADVANCED FUNCTIONAL MATERIALS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
- (2012) Young Tack Lee et al. ADVANCED MATERIALS
- Graphene-lead zirconate titanate optothermal field effect transistors
- (2012) Chun-Yi Hsieh et al. APPLIED PHYSICS LETTERS
- Long-term retention in organic ferroelectric-graphene memories
- (2012) Santosh Raghavan et al. APPLIED PHYSICS LETTERS
- The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
- (2012) Han Liu et al. APPLIED PHYSICS LETTERS
- A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer
- (2012) I. Jung et al. CARBON
- Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
- (2012) A. Kumar et al. EUROPEAN PHYSICAL JOURNAL B
- Ambipolar MoS2 Thin Flake Transistors
- (2012) Yijin Zhang et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
- (2012) Hee Sung Lee et al. Small
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
- (2011) Asif Islam Khan et al. APPLIED PHYSICS LETTERS
- Retention mechanism study of the ferroelectric field effect transistor
- (2011) Xiao Pan et al. APPLIED PHYSICS LETTERS
- Robust bi-stable memory operation in single-layer graphene ferroelectric memory
- (2011) Emil B. Song et al. APPLIED PHYSICS LETTERS
- Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
- (2011) Yi Zheng et al. EPL
- Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films
- (2011) Dong Guo et al. JOURNAL OF PHYSICAL CHEMISTRY B
- High-frequency, scaled graphene transistors on diamond-like carbon
- (2011) Yanqing Wu et al. NATURE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Electronic transport in two-dimensional graphene
- (2011) S. Das Sarma et al. REVIEWS OF MODERN PHYSICS
- Hysteresis of Electronic Transport in Graphene Transistors
- (2010) Haomin Wang et al. ACS Nano
- Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3
- (2010) X. Hong et al. APPLIED PHYSICS LETTERS
- Design, Optimization, and Scaling of MEM Relays for Ultra-Low-Power Digital Logic
- (2010) Hei Kam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Enhanced Ferroelectric Switching Characteristics of P(VDF-TrFE) for Organic Memory Devices
- (2010) Damar Yoga Kusuma et al. JOURNAL OF PHYSICAL CHEMISTRY B
- Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates
- (2010) P Joshi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Controllable N-Doping of Graphene
- (2010) Beidou Guo et al. NANO LETTERS
- Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
- (2010) Myrsini Lafkioti et al. NANO LETTERS
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- Graphene Field-Effect Transistors with Ferroelectric Gating
- (2010) Yi Zheng et al. PHYSICAL REVIEW LETTERS
- Dirac electronic states in graphene systems: optical spectroscopy studies
- (2010) M Orlita et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels
- (2009) Kwang H. Lee et al. ADVANCED MATERIALS
- Gate-controlled nonvolatile graphene-ferroelectric memory
- (2009) Yi Zheng et al. APPLIED PHYSICS LETTERS
- Roadmap for 22nm and beyond (Invited Paper)
- (2009) H. Iwai MICROELECTRONIC ENGINEERING
- Direct observation of a widely tunable bandgap in bilayer graphene
- (2009) Yuanbo Zhang et al. NATURE
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
- (2009) X. Hong et al. PHYSICAL REVIEW LETTERS
- Reversible Chemical Switching of a Ferroelectric Film
- (2009) R. V. Wang et al. PHYSICAL REVIEW LETTERS
- Tailoring the structural properties of PVDF and P(VDF-TrFE) by using natural polymers as additives
- (2009) R.D. Simoes et al. POLYMER ENGINEERING AND SCIENCE
- Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films
- (2008) P. Paruch et al. APPLIED PHYSICS LETTERS
- A Thin Film Approach to Engineering Functionality into Oxides
- (2008) Darrell G. Schlom et al. JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
- Molecular Doping of Graphene
- (2007) T. O. Wehling et al. NANO LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search