A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer

Published 2012 View Full Article

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Title
A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer
Authors
Keywords
-
Journal
CARBON
Volume 50, Issue 10, Pages 3854-3858
Publisher
Elsevier BV
Online
2012-04-13
DOI
10.1016/j.carbon.2012.04.027

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