Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates

Title
Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2substrates
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 22, Issue 33, Pages 334214
Publisher
IOP Publishing
Online
2010-08-05
DOI
10.1088/0953-8984/22/33/334214

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