标题
Dynamic conductance characteristics in HfOx-based resistive random access memory
作者
关键词
-
出版物
RSC Advances
Volume 7, Issue 21, Pages 12984-12989
出版商
Royal Society of Chemistry (RSC)
发表日期
2017-02-24
DOI
10.1039/c7ra00567a
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
- (2016) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
- (2016) Boubacar Traore et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer
- (2016) Fei Zhou et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy
- (2016) Yao-Feng Chang et al. PROGRESS IN SOLID STATE CHEMISTRY
- Interface-induced two-step RESET for filament-based multi-level resistive memory
- (2016) Fang Yuan et al. SUPERLATTICES AND MICROSTRUCTURES
- Memristors for Energy-Efficient New Computing Paradigms
- (2016) Doo Seok Jeong et al. Advanced Electronic Materials
- Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide
- (2016) Yao-Feng Chang et al. Scientific Reports
- Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
- (2015) Fei Zhou et al. APPLIED PHYSICS LETTERS
- Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
- (2015) Umesh Chand et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Physical and chemical mechanisms in oxide-based resistance random access memory
- (2015) Kuan-Chang Chang et al. Nanoscale Research Letters
- Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
- (2014) Stefano Ambrogio et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
- (2014) Yao-Feng Chang et al. JOURNAL OF APPLIED PHYSICS
- Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
- (2014) Pengxiao Sun et al. Journal of Computational Electronics
- A Combined Modulation of Set Current With Reset Voltage to Achieve 2-bit/cell Performance for Filament-Based RRAM
- (2014) Fang Yuan et al. IEEE Journal of the Electron Devices Society
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure
- (2012) Yao-Feng Chang et al. ECS Journal of Solid State Science and Technology
- A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
- (2010) Li-Wei Feng et al. APPLIED PHYSICS LETTERS
- Impact of Electrode Materials on Resistive-Switching Memory Programming
- (2009) U. Russo et al. IEEE ELECTRON DEVICE LETTERS
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
- (2008) I. H. Inoue et al. PHYSICAL REVIEW B
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now