Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
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Title
Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
Authors
Keywords
Al<sub>2</sub>O<sub>3</sub>/GaN MOS channel device, Conductance method, Buffer traps, Interface traps
Journal
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-05-10
DOI
10.1186/s11671-017-2111-z
References
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