Scaling behavior of oxide-based electrothermal threshold switching devices

Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices

(2016) Dasheng Li et al.   ACS Applied Materials & Interfaces

Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

(2016) Minkook Kang et al.   APPLIED PHYSICS LETTERS

Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

(2016) Euijun Cha et al.   APPLIED PHYSICS LETTERS

An accurate locally active memristor model for S-type negative differential resistance in NbOx

(2016) Gary A. Gibson et al.   APPLIED PHYSICS LETTERS

Analysis of Functional Oxide based Selectors for Cross-Point Memories

(2016) Ahmedullah Aziz et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Phase transition characteristics in the conductivity of VO2(A) nanowires: size and surface effects

(2016) C. Q. Wang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays

(2016) Pritish Narayanan et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model

(2016) Carsten Funck et al.   Advanced Electronic Materials

Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

(2016) Yuhan Wang et al.   IEEE Journal of the Electron Devices Society

Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays

(2016) Rakesh Aluguri et al.   IEEE Journal of the Electron Devices Society

One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

(2015) Leqi Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays

(2015) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

(2015) Sanjoy Kumar Nandi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application

(2015) Jaehyuk Park et al.   MICROELECTRONIC ENGINEERING

Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays

(2015) Ming Wang et al.   Nanoscale

Switching mechanism in two-terminal vanadium dioxide devices

(2015) Iuliana P Radu et al.   NANOTECHNOLOGY

Subthreshold electrical transport in amorphous phase-change materials

(2015) Manuel Le Gallo et al.   NEW JOURNAL OF PHYSICS

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

(2014) Abhishek A. Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

(2014) Jiantao Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

(2014) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermal conductivity accumulation in amorphous silica and amorphous silicon

(2014) Jason M. Larkin et al.   PHYSICAL REVIEW B

MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

(2014) Rohit S Shenoy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

(2013) Seonghyun Kim et al.   MICROELECTRONIC ENGINEERING

Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

(2012) M. Anbarasu et al.   APPLIED PHYSICS LETTERS

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

(2012) Wally Czubatyj et al.   Electronic Materials Letters

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

(2011) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices

(2011) Yan Zhang et al.   SOLID-STATE ELECTRONICS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE