Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 4, Issue 1, Pages 11-14Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2015.2503922
Keywords
Niobium dioxide; threshold switching; metal-insulator transition
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Funding
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1229603] Funding Source: National Science Foundation
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We have observed threshold switching (TS) with minimal hysteresis and a small threshold electric field (60-90 kV/cm) in Nb/NbO2/TiN structures. The TS was unipolar with certain repeatability. A less sharp but still sizable change in the device resistance can be observed up to 150 degrees C. The TS without Nb capping layer exhibited hysteretic characteristics. It was proposed that the surface Nb2O5 layer on NbO2 could significantly modify the TS in this vertical device. This understanding of the surface effect will allow further control of the non-linear IV characteristics for NbO2-based switches or selector devices.
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