Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

Published 2015 View Full Article

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Title
Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 48, Issue 19, Pages 195105
Publisher
IOP Publishing
Online
2015-04-08
DOI
10.1088/0022-3727/48/19/195105

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