Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 2, Issue 7, Pages 1600169
Publisher
Wiley
Online
2016-06-10
DOI
10.1002/aelm.201600169
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- An accurate locally active memristor model for S-type negative differential resistance in NbOx
- (2016) Gary A. Gibson et al. APPLIED PHYSICS LETTERS
- Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
- (2015) Anne Siemon et al. ADVANCED FUNCTIONAL MATERIALS
- Nonlinear Dynamics of a Locally-Active Memristor
- (2015) Alon Ascoli et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector
- (2015) Leqi Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!
- (2015) Herbert Schroeder JOURNAL OF APPLIED PHYSICS
- Effect of the stoichiometry of niobium oxide on the resistive switching of Nb 2 O 5 based metal–insulator–metal stacks
- (2015) F. Hanzig et al. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
- Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration
- (2015) Sanjoy Kumar Nandi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process
- (2015) Astrid Marchewka et al. Advanced Electronic Materials
- Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films
- (2014) Helge Wylezich et al. ACS Applied Materials & Interfaces
- Reduced Threshold Current in NbO2 Selector by Engineering Device Structure
- (2014) Xinjun Liu et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Metal-Insulator-Metal Tunnel Diode Selectors
- (2014) Bogdan Govoreanu et al. IEEE ELECTRON DEVICE LETTERS
- The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO x films
- (2014) M. Vos et al. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
- Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
- (2013) Suhas Kumar et al. ADVANCED MATERIALS
- Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
- (2012) Timothee Blanquart et al. CHEMISTRY OF MATERIALS
- Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
- (2012) Matthew D Pickett et al. NANOTECHNOLOGY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- The improved resistive switching properties of TaOx-based RRAM devices by using WNx as bottom electrode
- (2012) Qigang Zhou et al. PHYSICA B-CONDENSED MATTER
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System
- (2011) Matthew D. Pickett et al. ADVANCED MATERIALS
- Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices
- (2011) C. Hermes et al. IEEE ELECTRON DEVICE LETTERS
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Thermodynamic Properties of Niobium Oxides
- (2010) K. T. Jacob et al. JOURNAL OF CHEMICAL AND ENGINEERING DATA
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Threshold switching and phase transition numerical models for phase change memory simulations
- (2008) A. Redaelli et al. JOURNAL OF APPLIED PHYSICS
- Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
- (2008) Daniele Ielmini PHYSICAL REVIEW B
- Generalized Adiabatic Polaron Hopping: Meyer-Neldel Compensation and Poole-Frenkel Behavior
- (2008) David Emin PHYSICAL REVIEW LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started