Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

(2011) Wootae Lee et al.   APPLIED PHYSICS LETTERS

Nanoscale imaging and control of resistance switching in VO2 at room temperature

(2010) Jeehoon Kim et al.   APPLIED PHYSICS LETTERS

Interplay between Ferroelastic and Metal−Insulator Phase Transitions in Strained Quasi-Two-Dimensional VO2Nanoplatelets

(2010) Alexander Tselev et al.   NANO LETTERS

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

$\hbox{VO}_{2}$ Thin-Film Varistor Based on Metal-Insulator Transition

(2009) Bong-Jun Kim et al.   IEEE ELECTRON DEVICE LETTERS

On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

(2009) Gokul Gopalakrishnan et al.   JOURNAL OF MATERIALS SCIENCE

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2Nanobeam

(2009) Shixiong Zhang et al.   NANO LETTERS

Surface-Stress-Induced Mott Transition and Nature of Associated Spatial Phase Transition in Single Crystalline VO2Nanowires

(2009) Jung Inn Sohn et al.   NANO LETTERS