Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Published 2013 View Full Article

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Title
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 107, Issue -, Pages 33-36
Publisher
Elsevier BV
Online
2013-03-08
DOI
10.1016/j.mee.2013.02.084

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