标题
Scaling behavior of oxide-based electrothermal threshold switching devices
作者
关键词
-
出版物
Nanoscale
Volume 9, Issue 37, Pages 14139-14148
出版商
Royal Society of Chemistry (RSC)
发表日期
2017-08-24
DOI
10.1039/c7nr03865h
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices
- (2016) Dasheng Li et al. ACS Applied Materials & Interfaces
- Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger
- (2016) Minkook Kang et al. APPLIED PHYSICS LETTERS
- Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
- (2016) Euijun Cha et al. APPLIED PHYSICS LETTERS
- An accurate locally active memristor model for S-type negative differential resistance in NbOx
- (2016) Gary A. Gibson et al. APPLIED PHYSICS LETTERS
- Analysis of Functional Oxide based Selectors for Cross-Point Memories
- (2016) Ahmedullah Aziz et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Phase transition characteristics in the conductivity of VO2(A) nanowires: size and surface effects
- (2016) C. Q. Wang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Circuit-Level Benchmarking of Access Devices for Resistive Nonvolatile Memory Arrays
- (2016) Pritish Narayanan et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
- (2016) Carsten Funck et al. Advanced Electronic Materials
- Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices
- (2016) Yuhan Wang et al. IEEE Journal of the Electron Devices Society
- Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
- (2016) Rakesh Aluguri et al. IEEE Journal of the Electron Devices Society
- One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector
- (2015) Leqi Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays
- (2015) An Chen IEEE TRANSACTIONS ON ELECTRON DEVICES
- Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration
- (2015) Sanjoy Kumar Nandi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application
- (2015) Jaehyuk Park et al. MICROELECTRONIC ENGINEERING
- Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
- (2015) Ming Wang et al. Nanoscale
- Switching mechanism in two-terminal vanadium dioxide devices
- (2015) Iuliana P Radu et al. NANOTECHNOLOGY
- Subthreshold electrical transport in amorphous phase-change materials
- (2015) Manuel Le Gallo et al. NEW JOURNAL OF PHYSICS
- Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
- (2014) Abhishek A. Sharma et al. ADVANCED FUNCTIONAL MATERIALS
- Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
- (2014) Jiantao Zhou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Crossbar RRAM Arrays: Selector Device Requirements During Write Operation
- (2014) Sungho Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermal conductivity accumulation in amorphous silica and amorphous silicon
- (2014) Jason M. Larkin et al. PHYSICAL REVIEW B
- MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
- (2014) Rohit S Shenoy et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
- (2013) Seonghyun Kim et al. MICROELECTRONIC ENGINEERING
- Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
- (2012) M. Anbarasu et al. APPLIED PHYSICS LETTERS
- Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits
- (2012) Wally Czubatyj et al. Electronic Materials Letters
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory
- (2011) Bin Gao et al. IEEE ELECTRON DEVICE LETTERS
- Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices
- (2011) Yan Zhang et al. SOLID-STATE ELECTRONICS
- Phase Change Memory
- (2010) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started