Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

(2014) Rohit S Shenoy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

(2012) Wootae Lee et al.   ACS Nano

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

(2012) Matthew D Pickett et al.   NANOTECHNOLOGY

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Mesoscopic Metal−Insulator Transition at Ferroelastic Domain Walls in VO2

(2010) Alexander Tselev et al.   ACS Nano

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2Nanobeam

(2009) Shixiong Zhang et al.   NANO LETTERS