Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

(2016) Yanfeng Ji et al.   APPLIED PHYSICS LETTERS

Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

(2016) Yuchao Yang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

(2015) A. Belmonte et al.   IEEE ELECTRON DEVICE LETTERS

Conductive Atomic Force Microscopy Investigation of Switching Thresholds in Titanium Dioxide Thin Films

(2015) M. Trapatseli et al.   Journal of Physical Chemistry C

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

(2015) Umberto Celano et al.   Journal of Physical Chemistry Letters

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

(2015) Umberto Celano et al.   NANO LETTERS

Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

(2015) William A. Hubbard et al.   NANO LETTERS

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

(2015) Yuanyuan Shi et al.   Advanced Electronic Materials

Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three-Phase Boundaries

(2014) Christian Lenser et al.   ADVANCED FUNCTIONAL MATERIALS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Filament observation in metal-oxide resistive switching devices

(2013) Umberto Celano et al.   APPLIED PHYSICS LETTERS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices

(2013) Umberto Celano et al.   MICROELECTRONIC ENGINEERING

Tip loading effects on AFM-based transport measurements of metal–oxide interfaces

(2013) Jiechang Hou et al.   NANOTECHNOLOGY

Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization

(2012) M. Lanza et al.   ADVANCED MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Memristive Behavior of ZnO/Au Film Investigated by a TiN CAFM Tip and Its Model Based on the Experiments

(2012) Wenhong Wang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Scaling Potential of Local Redox Processes in Memristive SrTiO $_{3}$ Thin-Film Devices

(2012) Regina Dittmann et al.   PROCEEDINGS OF THE IEEE

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy

(2011) Feng Miao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects

(2010) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

(2010) Mario Lanza et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

(2010) Ruth Muenstermann et al.   JOURNAL OF APPLIED PHYSICS

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

(2010) M. Lanza et al.   MICROELECTRONICS RELIABILITY

Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic

(2010) V.V.N. Obreja et al.   MICROELECTRONICS RELIABILITY

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

(2010) M. Lanza et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Force modulation of tunnel gaps in metal oxide memristive nanoswitches

(2009) Feng Miao et al.   APPLIED PHYSICS LETTERS

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

(2009) M. Lanza et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

(2009) L. Aguilera et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

(2009) M. Lanza et al.   MICROELECTRONIC ENGINEERING

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

(2009) M. Lanza et al.   MICROELECTRONICS RELIABILITY

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress

(2008) Sang-Soo Hwang et al.   JOURNAL OF APPLIED PHYSICS

Performance improvement of CuO[sub x] with gradual oxygen concentration for nonvolatile memory application

(2008) P. Zhou et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room Temperature

(2008) Feng Miao et al.   PHYSICAL REVIEW LETTERS

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

(2008) L. Aguilera et al.   REVIEW OF SCIENTIFIC INSTRUMENTS