Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications

Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices

(2016) Arvind Kumar et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

(2016) R. Zhang et al.   APPLIED PHYSICS LETTERS

Low temperature solution processed high-κ ZrO 2 gate dielectrics for nanoelectonics

(2016) Arvind Kumar et al.   APPLIED SURFACE SCIENCE

Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high- k HfO 2 gate dielectrics

(2016) Peng Jin et al.   CERAMICS INTERNATIONAL

All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

(2016) Sandip Mondal et al.   IEEE ELECTRON DEVICE LETTERS

High-surface area mesoporous Pt/TiO 2 hollow chains for efficient formaldehyde decomposition at ambient temperature

(2016) Lifang Qi et al.   JOURNAL OF HAZARDOUS MATERIALS

Critical investigation of high performance spin-coated high-κ titania thin films based MOS capacitor

(2016) Arvind Kumar et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Tunable dielectric properties of TiO 2 thin film based MOS systems for application in microelectronics

(2016) Gyanan et al.   SUPERLATTICES AND MICROSTRUCTURES

Defect-induced bandgap narrowing in low-k dielectrics

(2015) X. Guo et al.   APPLIED PHYSICS LETTERS

Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications

(2015) Feng Zhang et al.   CERAMICS INTERNATIONAL

Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

(2015) Il-Kwon Oh et al.   CHEMISTRY OF MATERIALS

Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack

(2015) J. Gao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor

(2015) Irmak Karaduman et al.   JOURNAL OF APPLIED PHYSICS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Interfacial Control and Modulation of Band Alignment of Atomic Layer Deposition-Derived HfO2/Si Gate Stack by Rapid Thermal Annealing

(2015) H. H. Wei et al.   Science of Advanced Materials

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

(2014) Gang He et al.   ACS Applied Materials & Interfaces

High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

(2014) Mazran Esro et al.   ADVANCED FUNCTIONAL MATERIALS

Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

(2014) Hong-Liang Lu et al.   APPLIED PHYSICS LETTERS

Excellent Current Drivability and Environmental Stability in Room-Temperature-Fabricated Pentacene-Based Organic Field-Effect Transistors With ${\rm HfO}_{2}$ Gate Insulators

(2014) Min Liao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO2 thin films by TiO2 incorporation

(2014) J.W. Zhang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Measurement of bandgap energies in low-k organosilicates

(2014) M. T. Nichols et al.   JOURNAL OF APPLIED PHYSICS

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

(2014) Pradipta K. Nayak et al.   Scientific Reports

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

(2014) Jiangwei Liu et al.   Scientific Reports

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

(2014) Gang He et al.   Journal of Materials Chemistry C

Optimization of HfO2 films for high transconductance back gated graphene transistors

(2013) Kolla Lakshmi Ganapathi et al.   APPLIED PHYSICS LETTERS

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

(2013) Gang He et al.   SURFACE SCIENCE REPORTS

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

(2013) Gang He et al.   APL Materials

Breakdown of High-Performance Monolayer MoS2 Transistors

(2012) Dominik Lembke et al.   ACS Nano

Band offsets in HfO2/InGaZnO4 heterojunctions

(2012) Hyun Cho et al.   APPLIED PHYSICS LETTERS

Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

(2012) Christophe Avis et al.   JOURNAL OF MATERIALS CHEMISTRY

An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

(2012) Z. Q. Liu et al.   JOURNAL OF MATERIALS CHEMISTRY

Structure and dielectric properties of amorphous high-κoxides: HfO2, ZrO2, and their alloys

(2012) Yin Wang et al.   PHYSICAL REVIEW B

Microstructural and thermal investigations of HfO2 nanoparticles

(2012) Girija S. Chaubey et al.   RSC Advances

Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

(2012) Young Bum Yoo et al.   Journal of Materials Chemistry C

Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

(2011) In-Sung Park et al.   APPLIED PHYSICS LETTERS

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

(2011) Flora M. Li et al.   APPLIED PHYSICS LETTERS

First principles study of the structural, electronic, and dielectric properties of amorphous HfO2

(2011) Tsung-Ju Chen et al.   JOURNAL OF APPLIED PHYSICS

Quasiparticle Excitations and Charge Transition Levels of Oxygen Vacancies in Hafnia

(2011) Manish Jain et al.   PHYSICAL REVIEW LETTERS

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

(2011) Gang He et al.   PROGRESS IN MATERIALS SCIENCE

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors

(2010) Woo-Jun Yoon et al.   ORGANIC ELECTRONICS

Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering

(2010) K. Zou et al.   PHYSICAL REVIEW LETTERS

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

(2009) Q. Chen et al.   APPLIED PHYSICS LETTERS

Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

(2009) Shree Prakash Tiwari et al.   APPLIED PHYSICS LETTERS

Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress

(2009) Xiao-Hong Zhang et al.   APPLIED PHYSICS LETTERS

Characterization of high-k HfO2 films prepared using chemically modified alkoxy-derived solutions

(2009) Kazuyuki Suzuki et al.   JOURNAL OF APPLIED PHYSICS

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

(2008) Peter Broqvist et al.   APPLIED PHYSICS LETTERS

Oxygen defect accumulation at Si:HfO2 interfaces

(2008) C. Tang et al.   APPLIED PHYSICS LETTERS

Oxygen defect induced photoluminescence of HfO2 thin films

(2008) Jie Ni et al.   APPLIED PHYSICS LETTERS