Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
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Title
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
Authors
Keywords
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Journal
Scientific Reports
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2014-09-22
DOI
10.1038/srep06395
References
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Related references
Note: Only part of the references are listed.- Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material
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- (2012) Robert Edgington et al. JOURNAL OF APPLIED PHYSICS
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- (2011) Takeyasu Saito et al. JOURNAL OF ELECTRONIC MATERIALS
- Demonstration of diamond field effect transistors by AlN/diamond heterostructure
- (2011) Masataka Imura et al. Physica Status Solidi-Rapid Research Letters
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- (2008) S. Hino et al. APPLIED PHYSICS LETTERS
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- (2008) K. Prabakar et al. VACUUM
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- (2007) D. Kueck et al. DIAMOND AND RELATED MATERIALS
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