Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors

Published 2010 View Full Article

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Title
Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 11, Issue 11, Pages 1719-1722
Publisher
Elsevier BV
Online
2010-08-07
DOI
10.1016/j.orgel.2010.07.026

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