High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Title
High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics
Authors
Keywords
-
Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 25, Issue 1, Pages 134-141
Publisher
Wiley
Online
2014-11-11
DOI
10.1002/adfm.201402684

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