Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack

Published 2015 View Full Article

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Title
Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO 2 /Si gate stack
Authors
Keywords
High-k gate dielectric, Interface thermal stability, Sputtering, Electrical properties, Leakage current mechanism
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 647, Issue -, Pages 322-330
Publisher
Elsevier BV
Online
2015-06-19
DOI
10.1016/j.jallcom.2015.05.157

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