Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Published 2008 View Full Article

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Title
Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 13, Pages 132911
Publisher
AIP Publishing
Online
2008-04-05
DOI
10.1063/1.2907704

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