Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Wireless operations for 13.56-MHz band RFID tag using amorphous oxide TFTs

(2011) Hiroaki Ozaki et al.   IEICE Electronics Express

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors

(2011) Seung-Yeol Han et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing

(2009) Yutomo Kikuchi et al.   THIN SOLID FILMS

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS