Oxygen flow effects on electrical properties, stability, and density of states of amorphous In–Ga–Zn–O thin-film transistors

Published 2014 View Full Article

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Title
Oxygen flow effects on electrical properties, stability, and density of states of amorphous In–Ga–Zn–O thin-film transistors
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 12, Pages 121101
Publisher
Japan Society of Applied Physics
Online
2014-11-12
DOI
10.7567/jjap.53.121101

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