High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

(2014) Seokhyun Yoon et al.   ACS Applied Materials & Interfaces

Simple Method to Enhance Positive Bias Stress Stability of In–Ga–Zn–O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer

(2014) Ji Hoon Park et al.   ACS Applied Materials & Interfaces

Review of solution-processed oxide thin-film transistors

(2014) Si Joon Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origin of electrical improvement of amorphous TaInZnO TFT by oxygen thermo-pressure-induced process

(2014) Byung Du Ahn et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High performance a-IGZO thin-film transistors with mf-PVD SiO2as an etch-stop-layer

(2014) Manoj Nag et al.   Journal of the Society for Information Display

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

(2012) Se Yeob Park et al.   APPLIED PHYSICS LETTERS

Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering

(2011) Dong Kyu Seo et al.   ACTA MATERIALIA

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

(2011) Myung-Gil Kim et al.   NATURE MATERIALS

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

Accurate van der Waals coefficients from density functional theory

(2011) J. Tao et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

(2010) Yong-Hoon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

(2009) Gun Hee Kim et al.   APPLIED PHYSICS LETTERS

A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

(2009) Byung Du Ahn et al.   JAPANESE JOURNAL OF APPLIED PHYSICS